Photo curing｜FUJIFILM Wako Chemicals U.S.A. Corporation

The types of compounds used to cure monomers and resins with light depend on the product formed upon light irradiation. Various types of our "photobase generators" that generate organic bases under light irradiation, "photocationic initiators'' and "photoacid generators" that generate acids under light irradiation, and "azo polymerization initiators" that generate carbon radicals are shown below.

Photo base generators

WPBG-300

CAS RN® : 1801263-71-7

Can be employed with cross-linking agents such as thiol or anhydride.
Generates a strong base biguanide (pKbH=31.8) and radical upon irradiation.
Can be exposed with sensitizer at 365 nm and longer wavelength.

WPBG-345

CAS RN® : 2073916-67-1

Shows high stability (pot life) in various compositions.
Generates a strong base biguanide (pKbH=31.8) and radical upon irradiation.
Can be exposed with sensitizer at 365 nm and longer wavelength.

WPBG-266

CAS RN® : 1632211-89-2

Is optimal as catalyst for sol-gel method
Generates a strong base biguanide (pK_bH=31.8) and radical in high quantum yield upon irradiation.
Shows high solubility to various solvents
Was co-developed with Dr. Koji Arimitsu, Professor, Tokyo University of Science.

WPBG-018

CAS RN® : 1228312-05-7

Light absorption in long-wavelength region, and has excellent solubility.
Generates a weak base diethylamine upon irradiation.

Photo cationic initiators

WPI-113

CAS RN® : 477602-76-9

Generates HPF6
Does not include harmful heavy metals.
Hardly colors at the time of epoxy curing.

WPI-116

CAS RN® : 1360895-51-7

Since it generates hexafluoroantimonic acid, it shows high curing performance with a small amount of addition.
Shows higher curing performance in the WPI series.

Photo acid generators

WPAG-145

CAS RN® : 138529-81-4

For photoresist for manufacturing semiconductor device, etc.

WPAG-170

CAS RN® : 138529-84-7

For photoresist for manufacturing semiconductor device, etc.

WPAG-199

CAS RN® : 14159-45-6

For photoresist for manufacturing semiconductor device, etc.

WPAG-367

CAS RN® : 347841-51-4

For photoresist for manufacturing semiconductor device, etc.

Water soluble Azo initiators

VA-086

CAS RN® : 61551-69-7

Potential for introducing a hydroxyl into the terminus of polymer
10 Hour half-life decomposition temperature: 86℃

V-50

CAS RN® : 2997-92-4

Used for superabsorbent polymer and flocculants
10 Hour half-life decomposition temperature: 56℃(in water)

VA-044

CAS RN® : 27776-21-2

Non-nitrile water-soluble azo initiator having low decomposition temperature
10 Hour half-life decomposition temperature: 44℃(in water)

V-501

CAS RN® : 2638-94-0

Non-halogen water-soluble azo initiator
10 Hour half-life decomposition temperature: 63℃ (DMF)

Oil soluble Azo intiators

V-601

CAS RN® : 2589-57-3

Non-nitrile azo initiator as an alternative to AIBN
With equivalent polymerization activity of AIBN. Efficiency of polymerization rises in alcohol solvents
10 Hour half-life decomposition temperature: 66℃